SPT36-C Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Silicone Photo-Transistor

SPT36-C
TECHNICAL DATA
Silicone Photo-Transistor, SMD package
SPT36-C is a surface mount type photo-transistor containing a chip with 0.6x0.6 mm active area,
mounted into a ceramic package and covered with silicone. This device is featuring excellent
responsibility of 20 µs and a high photocurrent. It’s designed to be easy of setting up optically with
a wide angle of half sensitivity of ±40 degrees.
Specifications
• Spectral Responsivity (Peak):
• Chip Size:
• Active Area:
• Package:
Type:
Resin Material:
900 nm
0.8 x 0.8 mm
0.6 x 0.6 mm
SMD
Ceramics
Silicone
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol
C-E Breakdown Voltage
V_CEO
E-C Breakdown Voltage
V_ECO
Collector Current
I_C
Collector Dissipation
P_C
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *¹
T_sol
*¹ must be completed within 3 seconds
Value Unit
30
V
5
V
10
mA
50
mW
-25 … +125 °C
-30 … +100 °C
240
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Photo Current
Collector Dark Current
Collector-Emitter Satu. Voltage
Spectral Responsivity (Peak)
Half Angle of Sensitivity
Rise Time (10-90%)
Fall Time (10-90%)
Symbol
I_L
I_D
V_CE(S)
λ_P
Θ_1/2
t_r
t_f
Condition
V_CE=5V, L=1000Lx
V_CE=5V
I_C=2mA, L=1000Lx
R_L=1KΩ, V_R=5V
I_C=1mA
Min.
1
-
-
-
-
-
Typ.
3
-
-
900
±40
20
20
Max.
-
200
0.3
-
-
-
-
Unit
mA
nA
V
nm
deg
µs
µs
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
20.11.2012
SPT36-C
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