SMT750-23 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Infrared LED

SMT750-23
TECHNICAL DATA
Infrared LED, SMD
AlGaAs
SMT750-23 is a AlGaAs LED, mounted on a lead frame as TOP LED package with epoxy resin
lens. On forward bias, it emits a radiation of typical 20 mW at a peak wavelength of 750 nm.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
Lead frame die:
• Lens:
AlGaAs
750 nm
20 mW
SMD, PPA resin
silver plated
epoxy resin (Ø2.6 mm)
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
190
Forward Current
I_F
100
Pulse Forward Current *¹
I_FP
500
Reverse Voltage
V_R
5
Operating Temperature
T_opr
-20 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +80
T_sol
255
*¹ duty = 1%, pulse width = 10 µs
*² must be completed within 3 seconds at 260°C
Unit
mW
mA
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
V_F
I_F = 50 mA
I_R
V_R = 5 V
P_O
I_F = 50 mA
I_E
I_F = 50 mA
λ_P
I_F = 50 mA
Δλ
I_F = 50 mA
Θ_1/2
I_F = 50 mA
t_r
I_F = 50 mA
t_f
I_F = 50 mA
Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512
Min.
-
-
12
15
735
-
-
-
-
Typ.
1.85
-
20
35
750
35
±15
80
80
Max.
2.00
10
-
-
765
-
-
-
-
Unit
V
µA
mW
mW/sr
nm
nm
deg.
ns
ns
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
30.05.2012
SMT750-23
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