SMB1W-770R Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – High Power LED

SMB1W-770R
TECHNICAL DATA
High Power LED, SMD
AlGaAs
SMB1W-770R are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with silicone resin. On forward bias, it emits a radiation of typical 330 mW at
a peak wavelength of 770 nm.
Specifications
• Structure: AlGaAs, 1W high power chip
• Peak Wavelength: typ. 770 nm
• Optical Output Power: typ. 330 mW
• Package
SMD, PPA resin
Lead frame die: silver plated on copper
Lens: silicone resin
Absolute Maximum Ratings (T_a=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current *¹
I_FP
Reverse Voltage
V_R
Thermal Resistance
R_th
Junction Temperature
T_J
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 10 µs
*² must be completed within 5 seconds
Value
2500
800
3000
5
10
135
-40 … +125
-40 … +125
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol
Condition
Forward Voltage
V_F
Pulsed Forward Current
V_FP
Total Radiated Power
P_O
Radiant Intensity
I_E
Peak Wavelength
λ_P
Half Width
Δλ
Viewing Half Angle
Θ_1/2
Rise Time
t_r
Fall Time
t_f
I_F = 800 mA
I_FP = 3 A
I_F = 800 mA
I_FP = 3 A
I_F = 800 mA
I_FP = 3 A
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
Total Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
2.0
3.5
330
1250
145
550
770
25
±62
80
80
Max.
2.5
5.5
-
-
-
-
-
-
-
-
-
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
Notes: Do not view directly into the emitting area of the LED during operation!
The above specifications are for reference purpose only and subjected to change without prior notice.
23.02.2012
SMB1W-770R
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