SMB1W-760-I Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – High Power LED

SMB1W-760-I
TECHNICAL DATA
High Power LED, SMD
AlGaAs
SMB1W-760-I are AlGaAs High Power LEDs isolated mounted on a cooper heat sink with a 5x5
mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 330
mW at a peak wavelength of 760 nm.
Specifications
• Structure: AlGaAs, 1W high power chip
• Peak Wavelength: typ. 760 nm
• Optical Output Power: typ. 330 mW
• Package
SMD, PPA resin Isolator: AIN ceramics
Lead frame die: silver plated on copper
Lens: epoxy resin
Absolute Maximum Ratings (T_a=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current *¹
I_FP
Reverse Voltage
V_R
Thermal Resistance
R_th
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 10 µs
*² must be completed within 5 seconds
Value
2000
800
4000
5
10
-30 … +85
-30 … +100
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
Electro-Optical Characteristics
Item
Symbol Condition
Forward Voltage
V_F
Pulsed Forward Current
V_FP
Total Radiated Power
P_O
Radiant Intensity
I_E
Peak Wavelength
λ_P
Half Width
Δλ
Viewing Half Angle
Θ_1/2
Rise Time
t_r
Fall Time
t_f
I_F = 800 mA
I_FP = 4 A
I_F = 800 mA
I_FP = 4 A
I_F = 800 mA
I_FP = 4 A
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
Total Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
2.0
4.5
330
1650
145
725
760
25
±62
80
80
(Unit: mm)
Max.
2.5
5.5
-
-
-
-
-
-
-
-
-
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
Notes: Do not view directly into the emitting area of the LED during operation!
The above specifications are for reference purpose only and subjected to change without prior notice.
13.10.2011
SMB1W-760-I
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