SMB1W-670R Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – High Power LED

SMB1W-670R
TECHNICAL DATA
High Power LED, SMD
AlGaAs
SMB1W-670R is a AlGaAs high power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with epoxy resin. On forward bias, it emits a radiation of typical 330 mW at a
peak wavelength of 670 nm.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
Lead frame die:
• Lens:
AlGaAs, 1W high power chip
670 nm
200 mW
SMD, PPA resin
silver plated on copper
epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current *¹
I_FP
Reverse Voltage
V_R
Thermal Resistance
R_th
Junction Temperature
T_J
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 10 µs
*² must be completed within 3 seconds
Value
1900
800
3000
5
10
100
-40 … +85
-40 … +100
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Forward Voltage
Pulsed Forward Voltage
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
V_F
I_F = 600 mA
V_FP
I_FP = 3 A
P_O
I_F = 600 mA
I_FP = 3 A
I_E
I_F = 600 mA
I_FP = 3 A
λ_P
I_F = 600 mA
Δλ
I_F = 600 mA
Θ_1/2
I_F = 100 mA
t_r
I_F = 100 mA
t_f
I_F = 100 mA
Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
Min.
-
-
-
-
-
-
665
-
-
-
-
Typ.
2.0
3.6
200
1000
80
400
675
25
±62
200
30
Max.
2.3
4.5
-
-
-
-
685
-
-
-
-
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
SMB1W-670R
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