SMB1N-850D Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – infrared high power led

SMB1N-850D
v 1.0 17.03.2014
Description
SMB1N-850D is a surface mount AlGaAs High Power LED with a typical peak wavelength of
850 nm and radiation of 650 mW. It comes in SMD package (PA9T) with silver plated soldering pads
(lead free solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
2500
1000
3000
5
10
120
+ 100
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength
λP
Half Width
∆λ
VF
Forward Voltage
VF
VFP
Radiated Power *¹
PO
Radiant Intensity *²
IE
Viewing Angle
φ
Rise Time
tR
Fall Time
tF
*¹ measured by S3584-08
*² measured by CIE127-2007 Condition B
IF=1000mA
IF=1000mA
IF=350mA
IF=1000mA
IFP=3A
IF=1000mA
IFP=3A
IF=1000mA
IFP=3A
IF=100mA
IF=1000mA
IF=1000mA
Min.
840
450
Values
Typ.
850
37
1.5
2.1
2.5
650
1800
210
600
124
50
50
Max.
1.9
2.5
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
www.roithner-laser.com
1