SMB1N-830N Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – infrared high power led

SMB1N-830N
v 1.0 07.03.2014
Description
SMB1N-830 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 830 nm and
radiation of 280 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
1800
800
2000
5
10
120
+ 100
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength
λP
Half Width
∆λ
Forward Voltage
VF
VFP
Radiated Power *¹
PO
Radiant Intensity *²
IE
Viewing Angle
φ
Rise Time
tR
Fall Time
tF
*¹ measured by S3584-08
*² measured by CIE127-2007 Condition B
IF=800mA
IF=800mA
IF=800mA
IFP=2A
IF=800mA
IFP=2A
IF=800mA
IFP=2A
IF=100mA
IF=800mA
IF=800mA
Min.
820
Values
Typ.
830
40
1.8
2.3
280
680
130
310
128
25
30
Max.
840
2.2
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
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