SMB1N-770 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – red high power led

SMB1N-770
v 1.0 15.09.2014
Description
SMB1N-770 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 770 nm and
radiation of 290 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
2000
800
2000
5
10
120
+ 100
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength
λP
Half Width
∆λ
Forward Voltage
VF
VFP
Radiated Power *¹
PO
Radiant Intensity *²
IE
Viewing Angle
φ
Rise Time
tR
Fall Time
tF
*¹ measured by S3584-08
*² measured by CIE127-2007 Condition B
IF=800mA
IF=800mA
IF=800mA
IFP=2A
IF=800mA
IFP=2A
IF=800mA
IFP=2A
IF=100mA
IF=800mA
IF=800mA
Min.
760
Values
Typ.
770
25
2.3
3.2
290
700
125
300
130
70
75
Max.
780
2.5
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
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