SMB1N-720-02 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – infrared high power led

SMB1N-720-02
v 1.0 17.03.2014
Description
SMB1N-750-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 720 nm
and radiation of 190 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone or epoxy resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
1700
600
2000
5
10
120
+ 100
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength
λP
Half Width
∆λ
Forward Voltage
VF
VFP
Radiated Power *¹
PO
Radiant Intensity *²
IE
Viewing Angle
φ
Rise Time
tR
Fall Time
tF
*¹ measured by S3584-08
*² measured by CIE127-2007 Condition B
IF=600mA
IF=600mA
IF=600mA
IFP=2A
IF=600mA
IFP=2A
IF=600mA
IFP=2A
IF=100mA
IF=600mA
IF=600mA
Min.
710
140
Values
Typ.
720
24
2.2
3.7
190
630
380
1200
20
40
50
Max.
730
2.8
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
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