SMB1N-670D-02 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – red high power led

SMB1N-670D-02
v 1.0 17.03.2014
Description
SMB1N-670D-02 is a surface mount AlGaInP High Power LED with a typical peak wavelength of 670 nm
and radiation of 290 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
1500
500
1000
5
10
100
+ 85
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Peak Wavelength
Half Width
Forward Voltage
Radiated Power *¹
Radiant Intensity *²
Viewing Angle
Rise Time
Fall Time
*¹ measured by S3584-08
*² measured by Tektronix J-6512
Symbol Conditions
λP
IF=350mA
∆λ I_F=350mA
VF
IF=350mA
VFP
IFP=1A
PO
IF=350mA
IFP=1A
IE
IF=350mA
IFP=1A
φ
IF=100mA
tR
IF=350mA
tF
IF=350mA
Min.
660
Values
Typ.
670
16
2.3
2.7
290
800
590
1600
22
90
90
Max.
680
3.0
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
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