SMB1N-1050 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – infrared high power led

SMB1N-1050
v 1.0 03.10.2014
Description
SMB1N-1050 is a surface mount AlGaAsP High Power LED with a typical peak wavelength of 1050 nm
and radiation of 45 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
RTHJA
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
1000
600
2000
5
10
100
+ 100
+ 100
+ 250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength
λP
IF=500mA
Half Width
∆λ I_F=500mA
Forward Voltage
VF
IF=500mA
VFP
IFP=2A
Radiated Power *¹
PO
IF=500mA
IFP=2A
Radiant Intensity *²
IE
IF=500mA
IFP=2A
Viewing Angle
φ
IF=100mA
Rise Time
tR
IF=500mA
Fall Time
tF
IF=500mA
*¹ measured by G8370-85
*² measured by ANDO Optical Multi Meter AQ2140 & AQ2743
Min.
1000
Values
Typ.
1050
50
1.35
2.0
45
120
20
50
126
160
170
Max.
1100
1.65
3.5
Unit
nm
nm
V
mW
mW/sr
deg.
ns
ns
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