SMAL850 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power LED Array

SMAL850
TECHNICAL DATA
High Power LED Array, 60 chips, SMD
ALGaAs
SMAL850 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high
efficiency AlGaAs diode chips, mounted on an AIN ceramics and covered with clear silicone resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: AlGaAs, 60 LED chips
• Peak Wavelength: typ. 850 nm
• Optical Output Power: typ. 1.1 W
• Package: PCB, AIN ceramics
• Lens: clear epoxy or silicone resin
Absolute Maximum Ratings (T_a=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current*¹
I_FP
Junction Temperature
T_J
Thermal Resistance *²
R_TH
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *³
T_sol
*¹ duty = 1%, pulse width = 1 µs
*² junction – package, mounted on heat sink
*³ must be completed within 3 seconds
Value
10
1.2
5
100
6.3
50
-20 … +80
-30 … +100
250
Unit
W
A
A
°C
K/W
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Forward Voltage
Reverse Voltage
Symbol
V_F
V_R
Total Radiated Power *
P_O
Radiation Intensity
I_E
Peak Wavelength
λ_P
Half Width
Δλ
Viewing Half Angle
Θ_1/2
Rise Time
t_R
Fall Time
t_F
* Total Radiated Power is measured by S3584-08
Condition
I_F = 800 mA
I_R = 10 µA
I_F = 800 mA
I_FP = 4 A
I_F = 800 mA
I_F = 800 mA
I_F = 800 mA
I_F = 800 mA
I_F = 100 mA
I_F = 100 mA
Min.
-
30
-
-
-
840
-
-
-
-
Typ.
7.8
-
1.1
5.5
180
850
40
±72
15
10
Max.
-
-
-
-
-
860
-
-
-
-
Unit
V
V
W
mW/sr
nm
nm
deg.
ns
ns
The above specifications are for reference purpose only and subjected to change without prior notice.
15.02.2012
SMAL850
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