SIC01M-5LENS Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – ptb tested high chip stability

V 6.0
SIC01M-5LENS
Description
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark
current, high speed and low noise. These features make SiC the best available material for visible blind
semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The
temperature coefficient of signal (responsivity) is also low, <-0.1%/K. Because of the low noise (dark current,
in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs
an appropriate amplifier (see circuit on following page). SiC photodiodes are available as unfiltered broadband
devices or with optical filters providing UV-A, UV-B, or UV-C-only sensitivity, or erythemal action curve
compliance.
Maximum Ratings (T = 25°C)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 3s)
Symbol
UR
Topr
Tstg
Tsol
Min.
+20
-55
-55
Values
Max.
+170
+170
+260
Unit
V
°C
°C
°C
General Characteristics (T = 25°C)
Parameter
Sensitive Area
Dark current (1V reverse bias)
Capacitance
Short circuit (10mW/cm² at peak)
Temperature coefficient
Symbol
A
Id
C
ID
TC
Min.*
Values
Typ.*
11
0.07
50
1660
Max.*
-0.1
Unit
mm²
fA
pF
nA
%/K
Spectral Characteristics (T = 25°C)
Parameter
Max. spectral responsivity
Wavelength of max. spectral resp.
Responsivity range (S=0.1*Smax)
Visible blindness (Smax / S>405nm)
Symbol
Smax
λmax
-
VB
Min.*
0.085
220
Values
Typ.*
280
10¹⁰
Max.*
0.130
360
Unit
AW^-1
nm
nm
-
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