S8810MG Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

S8810MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Mode Structure: single mode, edge emitting
• Peak Wavelength : typ. 880 nm
• Optical Ouput Power: 10 mW
• Package: 5.6 mm
• Ridge width 1x5 µm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
PIN PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_rLD
V_rPIN
T_C
T_stg
Value
10
2
30
-10 … +60
-15 … +85
Specifications (T_C=25°C, P_O=10mW)
Item
Symbol
Min.
Typ.
Optical Specifications
Center Wavelength
FWHM Beam Divergence*
Electrical Specifications
λ_C
870
880
θ_║
8
12
θ_┴
28
38
Threshold Current
Operating Current
Slope Efficiency
I_th
-
10
I_op
-
29
η
0.3
0.5
Operating Voltage
Monitor Current
U_op
-
2.2
I_m
0.2
-
* θ║ and θ┴ are defined as the angle within the intensity is 50% of the peak value.
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
890
15
45
15
35
-
2.5
0.6
Unit
mW
V
V
°C
°C
Unit
nm
deg
deg
mA
mA
mW/mA
V
mA
19.04.2012
S8810MG
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