S8550MG Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

S8550MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 850 nm
• Optical Ouput Power: 50 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_rLD
T_C
T_stg
Value
50
2
-10 … +40
-15 … +85
Unit
mW
V
°C
°C
Specifications (T_C=25°C, P_O=50mW)
Item
Symbol
Min.
Optical Specifications
Center Wavelength
FWHM Beam Divergence*
Electrical Specifications
λ_C
830
θ_║
10
θ_┴
22
Threshold Current
Operating Current
Slope Efficiency
I_th
-
I_op
-
η
0.4
Operating Voltage
Monitor Current
U_op
1.5
I_m
0.05
* θ_║ and θ_┴ are defined as the angle within the intensity is 50% of the peak value.
Typ.
850
15
30
28
85
0.75
1.8
0.12
Max.
860
20
38
35
110
-
2.1
1.00
Unit
nm
deg
deg
mA
mA
mW/mA
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
04.10.2011
S8550MG
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