S8450MG Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

S8450MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 840 nm
• Optical Ouput Power: 50 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
PIN
Function
1 LD Cathode
2 LD Anode
3 n.c.
Bottom View
Absolute Maximum Ratings (T_C=20°C)
Item
CW Output Power
LD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_r
T_C
T_stg
Value
50
2
-10 … +40
-15 … +85
Unit
mW
V
°C
°C
Specifications (T_C=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Symbol
P_O
λ_C
θ_║
θ_┴
I_th
I_op
η
U_op
Min.
-
830
10
22
-
-
0.7
1.5
Typ.
50
840
15
30
28
85
0.9
1.8
Max.
-
850
20
38
35
110
-
2.1
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
04.10.2011
S8450MG
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