S8330MG Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

S8330MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 830 nm
• Optical Ouput Power: 30 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_rLD
V_rPD
T_C
T_stg
Value
30
2
30
-10 … +40
-10 … +85
Unit
mW
V
V
°C
°C
Specifications (T_C=25°C, P_O=30mW)
Item
Symbol
Min.
Optical Specifications
Center Wavelength
FWHM Beam Divergence*
Electrical Specifications
λ_C
820
θ_║
-
θ_┴
-
Threshold Current
Operating Current
Slope Efficiency
I_th
-
I_op
-
η
0.3
Operating Voltage
Monitor Current
U_op
-
I_m
-
* θ_║ and θ_┴ are defined as the angle within the intensity is 50% of the peak value.
Typ.
830
10
36
23
63
0.7
1.7
0.3
Max.
840
-
-
30
73
-
2.3
-
Unit
nm
deg
deg
mA
mA
mW/mA
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
04.10.2011
S8330MG
1 of 5