S808200MNP Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

S808200MNP
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 808 nm
• Optical Ouput Power: 200 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
PIN
Function
1 LD Cathode
2 LD Anode
3
Bottom View
Absolute Maximum Ratings (T_C=20°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_r
V_rPD
T_C
T_stg
Value
200
2
30
-10 … +40
-10 … +85
Unit
mW
V
V
°C
°C
Specifications (T_C=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Symbol
P_O
λ_C
θ_║
θ_┴
I_th
I_op
η
U_op
Min.
-
805
-
-
-
-
0.8
-
Typ.
200
808
12
40
70
260
1
1.9
Max.
-
811
-
-
80
280
-
1.95
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
06.09.2011
S808200MNP
1 of 5