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S808200MG Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode | |||
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S808200MG
TECHNICAL DATA
Infrared Laser Diode
Features
⢠Lasing Mode Structure: multi mode
⢠Peak Wavelength : typ. 808 nm
⢠Optical Ouput Power: 200 mW
⢠Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=20°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
PO
Vr
VrPD
TC
Tstg
Value
200
2
30
-10 ⦠+40
-10 ⦠+85
Unit
mW
V
V
°C
°C
Specifications (TC=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
Symbol
PO
λC
θâ
θâ´
Ith
Iop
η
Uop
Im
Min.
-
805
-
-
-
-
0.8
-
-
Typ.
200
808
12
40
70
260
1
1.9
0.3
Max.
-
811
-
-
80
280
-
1.95
2
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
23.09.2010
S808200MG
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