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RLT981000G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode
RLT981000G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• CW Output Power: 1 W
• Typical 975 nm Emission Wavelength
• High-efficiency Quantum Well Structure
• TO5 Package
Applications
• Solid-state Laser Pumping
• Medical Usage
• Infrared Night Vision Light Sources
• Information to identify
PIN CONNECTION
1. Laserdiode cathode
2. Laserdiode anode and photodiode cathode
3. Photodiode anode
Specifications (25°C)
Type
Optical Specification
CW Output Power PO
Peak Wavelength Δ
Spectral Width Δλ
Emitting Area
Wavelength Temperature Coefficient
Beam Divergence θ┴×θ║
Polarization
Electrical Specification
Slope Efficiency ES
Threshold Current Ith
Operation Current IO
Operation Voltage Vf
Series Resistance Rd
Package Style
Absolute Maximum Ratings
Reverse Voltage Vr
Operating Temperature TO
Storage Temperature Tstg
RLT981000G
1
975±15
≤ 3.5
100x1
0.3
48x10
TE
≥ 0.7
≤ 0.35
≤ 1.8
≤2
≤ 0.5
TO5
2.0
10 … 40
-40 … 85
Unit
W
nm
nm
µm
nm/°C
Deg
W/A
A
A
V
Ω
V
°C
°C
04.08.2010
rlt98100g.doc
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