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RLT960M-1WG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode
ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT960M-1WG TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: multi mode
Lasing wavelength: typ. 960 nm
Optical power: 1 W
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
1.2
1.5
10
-20 .. +35
-40 .. +70
UNIT
W
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Emitting Aperture
A
cw
1 x 100
µm²
Optical Output Power
Po
Threshold Current
Ith
Operation Current
Iop
Forward Voltage
Uf
Lasing Wavelength
λp
Spectral Width FWHM
∆λ
multi mode
cw
Po = 1 W
Po = 1 W
Po = 1 W
Po = 1 W
1
W
190 200 250 mA
1.1 1.2 1.3 A
1.7 1.8 V
955 960 965 nm
1.0 1.2 1.6 nm
Beam Divergence
θ//
Beam Divergence
θ⊥
Monitor Current
Im
Po = 1 W
Po = 1 W
Po = 1 W
25
°
30
°
100 500 1500 µA