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RLT8810MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laserdiode
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT8810MG TECHNICAL DATA
High Power Infrared Laserdiode
Structure: index guided single transverse mode
Lasing wavelength: 875 nm typ.
Output power: 10 mW cw
Package: 5.6 mm, TO-18
PIN CONNECTION:
NOTE!
LASERDIODE
MUST BE COOLED!
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operation Case Temperature
Storage Temperature
SYMBOL
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
10
2
30
-10 .. +60
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN
Threshold Current
Ith
Operation Current
Iop
Operating Voltage
Vop
Lasing Wavelength
λp
Beam Divergence
θ//
Beam Divergence
θ⊥
Slope Efficiency
η
cw
7
Po = 10 mW
20
Po = 10 mW
Po = 10 mW
Po = 10 mW
9
Po = 10 mW
30
cw
0.5
Monitor Current
Im
Po = 10 mW
TYP
10
25
1.65
875
10
33
0.7
400
MAX
15
30
1.8
883
12
38
1
500
UNIT
mA
mA
V
nm
°
°
mW/mA
µA