RLT855-10MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Laser Diode Technical Data

RLT855-10MG
Features
• Index Guided MQW Structure
• Wavelength : 855 nm (Typ.)
• Optical Power : 10 mW CW
• Threshold Current : 30 mA ( Typ. )
• Package Style : TO-18 (5.6 mmØ)
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25 ^oC )
DESCRIPTION
SYMBOL RATED VALUE
Optical Power (mW)
Operation Temperature (^oC)
Storage Temperature (^oC)
LD Reverse Voltage (V)
PD Reverse Voltage (V)
P_o
T_op
T_stg
V_LDR
V_PDR
5
-10 to +50
-40 to +85
2
30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 ^oC )
DESCRIPTION
SYMBOL
Lasing Wavelength (nm)
λ_p
Threshold Current (mA)
I_th
Operating Current (mA)
I_op
Operating Voltage (V)
V_op
Monitor Current (mA)
I_m
Slope Efficiency (mW/mA)
η
Beam Divergence ⎪⎢ (°)
θ⎪⎢
Beam Divergence ⊥ (°)
θ⊥
Astigmatism (μm)
A_s
MIN.
850
20
25
1.8
0.1
0.5
8
25
*
TYPICAL
855
30
45
2.0
0.45
0.7
10
30
11
MAX.
895
50
55
2.5
0.75
0.9
12
40
*
TEST CONDITION
P_o=10mW
P_o=10mW
P_o=10mW
P_o=10mW
P_o=10mW
***
P_o=10mW
P_o=10mW
P_o=10mW
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UID: ATU61938489 - FN: 266954 f - Handelsgericht Wien