RLT85100MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Laser Diode Technical Data

RLT85100MG
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25 ^oC )
DESCRIPTION
SYMBOL RATED VALUE
Features
Optical Power (mW)
P_o
• Index Guided MQW Structure
Operation Temperature (^oC)
T_op
• Wavelength : 850 nm (Typ.)
Storage Temperature (^oC)
T_stg
• Optical Power : 100 mW CW
LD Reverse Voltage (V)
V_LDR
• Threshold Current : 100 mA ( Typ. )
• Package Style : TO-18 (5.6 mmØ)
PD Reverse Voltage (V)
V_PDR
100
-10 to +50
-40 to +85
2
30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 ^oC )
DESCRIPTION
SYMBOL
Lasing Wavelength (nm)
λ_p
Threshold Current (mA)
I_th
Operating Current (mA)
I_op
Operating Voltage (V)
V_op
Monitor Current (mA)
I_m
Slope Efficiency (mW/mA)
η
Beam Divergence ⎪⎢ (°)
θ⎪⎢
Beam Divergence ⊥ (°)
θ⊥
Astigmatism (μm)
A_s
MIN.
835
70
200
1.8
0.1
0.5
3
30
*
TYPICAL
850
100
250
2.0
1.0
0.7
5
40
11
MAX.
865
150
350
2.5
2.0
0.9
8
50
*
TEST CONDITION
P_o=100mW
P_o=100mW
P_o=100mW
P_o=100mW
P_o=100mW, V_R=5V
***
P_o=100mW
P_o=100mW
P_o=100mW, NA=0.4
03.08.2010
rlt85100mg.doc
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