RLT850M-1WG50 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

RLT850M-1WG50
TECHNICAL DATA
Infrared Laser Diode
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Monitor PD:
Electrical Connection
Pin Configuration
n-type
PIN
Function
1
LD Cathode
2
LD Anode, PD Cathode (case)
3
PD Anode
AlGaAs/InGaAs
AlGaAs/InGaAs
852 nm
1 W, cw
9 mm, flat window
build-in
n-type
Bottom View
Electro-Optical Characteristics
Item
Optical Specifications
Central Wavelength
Spectral Width (FWHM)
Optical Output Power
Beam Divergence
Emitting Aperture
Mode Structure
Electrical Specifications
Forward Current
Threshold Current
Forward Voltage
Slope Efficiency
Monitor Current
Absolute Maximum Ratings
Lifetime
Operating Case Temperature
Storage Temperature
Soldering Temperature *
* must be completed within 3 seconds
Symbol
λ_C
Δλ
P_O
θ║
θ┴
WxH
I_F
I_TH
V_F
η
I_M
T_C
T_STG
T_SOL
Min.
847
-
-
-
-
-
-
-
1.0
0.05
10000
-20
-40
-
Typ.
852
2
1.0
8
30
1x50
MM
1.09
180
1.9
1.2
-
25
-
-
specified at 25°C
Max.
Unit
857
nm
4
nm
-
W
11
deg.
35
deg.
µm
1.20
A
220
mA
2.2
V
-
W/A
1.3
mA
hour
+50
°C
+85
°C
250
°C
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
04.12.2012
RLT850M-1WG50
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