RLT8505MG Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – infrared laser diode

RLT8505MG
TECHNICAL DATA
Infrared Laser Diode
Features
• AlGaAs laser diode
• Peak Wavelength: 850 nm
• Optical Ouput Power: 5 mW
• Package: 5.6 mm, with photo diode
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_R (LD)
V_R (PD)
T_C
T_stg
Value
5
2
30
-10 … +40
-40 … +85
Specifications (T_C=25°C)
Item
Optical Specifications
CW Output Power
Peak Wavelength *
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
* Measuring specifications.
Symbol
P_O
λ_P
θ_║
θ_┴
I_th
I_op
η
U_op
I_m
Min.
-
845
8
25
5
15
0.4
1.8
0.3
Typ.
5
850
10
30
10
20
0.5
1.9
0.5
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
-
855
11
40
15
25
0.55
2.0
1.0
Unit
mW
V
V
°C
°C
Unit
mW
nm
deg
deg
mA
mA
W/A
V
mA
22.10.2013
RLT8505MG
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