RLT850-50MGS Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – infrared laser diode

RLT850-50MGS
v 1.0 28.11.2014
Description
RLT850-50MGS is a single mode Laser Diode emitting at typical 850 nm with rated output power of
50 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains
a built-in monitor PD.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ must be completed within 5 seconds
IF
VF
TCASE
TSTG
TSLD
Min.
Values
Max.
3.5
- 10
+ 40
- 15
+ 85
+ 260
Unit
mA
V
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Peak Wavelength
Half Width
Optical Output Power (CW Mode)
Laser Beam Mode
Emitter Size
Threshold Current
Forward Current
Forward Voltage
Slope Efficiency
Beam Divergence
Beam Divergence
Monitor Current
PD Reverse Voltage
Symbol
λP
∆λ
PO
ITH
IOP
VOP
η
Ó¨II
Ө┴
IM
Min.
830
Values
Typ.
840
2.0
50
Single Mode
Max.
850
28
35
85
110
1.5
1.8
2.1
0.7
0.9
10
15
20
22
30
38
0.1
30
Unit
nm
nm
mW
µm
mA
mA
V
mW/mA
°
°
mA
V
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