RLT850-100GS Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode

RLT850-100GS
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Lasing Mode Structure: single mode
• Peak Wavelength : typ. 852 nm
• Optical Output Power: 100 W
• Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Anode
LD Cathode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_R(LD)
V_R(PD)
T_C
T_stg
Value
-20 … +50
-40 … +80
Specifications (T_C=25°C)
Item
Symbol
Min.
Typ.
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
P_O
-
100
λ_P
847
852
Δλ
-
0.5
FWHM Beam Divergence
Emitting Aperature
θ_║
-
θ_┴
-
WxH
8
28
5x1
Lifetime
100000
-
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
I_th
-
20
I_op
-
120
η
0.9
1.0
Operating Voltage
V_op
-
1.9
Monitor Current
I_m
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
-
857
2
10
30
-
40
170
-
2.2
Unit
mW
V
V
°C
°C
Unit
mW
nm
nm
deg
deg
µm
hour
mA
mA
W/A
V
mA
12.07.2013
RLT850-100GS
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