RLT83500G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode

RLT83500G
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength: 830 nm typ.
Max. optical power: 500 mW, cw
Emitting Aperture: 1x50 μm²
Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
Specification (Tc = 25°C)
CHARACTERISTIC
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Slope Efficiency
Series Resistance
Central Wavelength
Spectral Width
Wavelength Temperature Coefficient
Beam Divergence
Beam Divergence
Monitor Current
Polarization
Reverse Voltage
Operating Temperature
Storage Temperature
MIN
0.5
≤0.25
≤0.95
≤2.1
≥0.80
0.80
830 ±10
≤3
0.3
10
40
400 – 1000
TE
2.0
10 - 30
-10 – 70
03.08.2010
rlt83500g.doc
UNIT
W
A
A
V
W/A
Ω
nm
nm
nm/°C
deg
deg
mA
V
°C
°C
1 of 2