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| RLT8340MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laserdiode | |||
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ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT8340MG TECHNICAL DATA
High Power Infrared Laserdiode
Structure: AlGaAs double heterostructure
Lasing wavelength: 830 nm typ.
Max. optical power: 40 mW, single mode
Package: 5.6 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
Top
Tstg
RATING
40
2
30
-10 .. +50
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Threshold Current
Operation Current
Operation Voltage
Lasing Wavelength
Beam Divergence
Beam Divergence
Monitor Current
Ith
cw
15 25
Iop
Po = 40 mW
70 80 90
Vop
Po = 40 mW
1.8 2.2
λp
Po = 40 mW
820 830 840
θ//
Po = 40 mW
8 10 11
θâ¥
Po = 40 mW
25 31 40
Im
Po = 40 mW, Vr=5V 400 600 800
UNIT
mA
mA
V
nm
°
°
µA
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