RLT831000G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode

RLT831000G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 830 nm
• Optical Ouput Power: 1 W
• Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Cathode
LD Anode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Value
Unit
CW Output Power
P_O
1
W
Reverse Voltage
U_R
2
V
Operating Case Temperature
T_C
-20 … +30
°C
Storage Temperature
T_stg
-40 … +70
°C
Specifications (T_C=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
Wavelength Temperature Coefficient
FWHM Beam Divergence
Emitting Aperature
Polarization
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Series Resistanve
Symbol
P_O
λ_P
Δλ
∂λ / ∂T
θ_║
θ_┴
WxH
I_th
I_op
η
U_op
R_D
Min.
-
825
-
-
-
-
-
-
0.8
-
-
Typ.
1.5
830
2
0.3
10
40
100 x 1
TE
-
-
-
-
0.8
Max.
-
835
4
-
-
-
400
1.6
-
2.1
-
Unit
W
nm
nm
nm/°C
deg
deg
µm
mA
A
W/A
V
Ω
The above specifications are for reference purpose only and subjected to change without prior notice.
03.08.2010
rlt831000g.doc
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