RLT808500G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laserdiode

RLT808500G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 808 nm typ.
Output power: 500 mW, cw
NOTE!
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
P_o
V_R(LD)
V_R(PD)
T_C
T_STG
RATING
550
2
30
-10 .. +40
-40 .. +80
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Optical Output Power
P_o
Threshold Current
I_th
Operation Current
I_op
Operation Voltage
V_op
Slope Efficiency
η
kink free
cw
P_o = 500 mW
P_o = 500 mW
cw
500
150 180
650 700 750
1.85 2.0
0.8 1.0 1.1
Lasing Wavelength
λ
P_o = 500 mW 805 808 811
Beam Divergence
θ_//
Beam Divergence
θ_⊥
Lasing Aperture
A
Recommended Operating
T_op
Temperature
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
cw
5 9 12
30 35 45
50x1
20 25 40
Monitor Current
I_m
P_o = 500 mW
0.6 1.5
UNIT
mW
mA
mA
V
W/A
nm
°
°
µm²
°C
mA
10.08.2010
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