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RLT80805MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared Laserdiode
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT80805MG TECHNICAL DATA
Infrared Laserdiode
Structure: GaAlAs double heterostructure
Lasing wavelength: 808 nm typ.
Max. optical power: 5 mW
Package: 5.6 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
5
2
30
-10 .. +45
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Optical Output Power
Po
kink free
5
Threshold Current
Ith
20 25 40
Operation Current
Iop
Po = 5 mW
40 50
Operation Voltage
Vop
Po = 5 mW
2.5
Lasing Wavelength
λp
Po = 5 mW
790 808 810
Beam Divergence
θ//
Po = 5 mW
5 8 11
Beam Divergence
θ⊥
Po = 5 mW
25 31 37
Astigmatism
As
Po = 5 mW, NA=0.4
5
Monitor Current
Im
Po = 5mW, Vr=5V
10
UNIT
mW
mA
mA
V
nm
°
°
µm
µA