RLT790-80MGS Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode

RLT790-80MGS
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Lasing Mode Structure: single mode
• Peak Wavelength : typ. 790 nm
• Optical Output Power: 80 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Anode
2 LD Cathode, PD Anode
3 PD Cathode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
Operating Case Temperature
Storage Temperature
Symbol
P_O
T_C
T_stg
Value
80
-10 … +60
-40 … +85
Specifications (T_C=25°C)
Item
Symbol
Min.
Typ.
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
P_O
-
80
λ_P
780
785
Δλ
-
0.5
FWHM Beam Divergence
Emitting Aperature
θ_║
-
θ_┴
-
WxH
8
25
5x1
Chip Cavity Length
0.75
Lifetime
100000
-
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
I_th
-
30
I_op
-
105
η
1.0
1.1
Operating Voltage
U_op
-
2.0
Monitor Current
I_m
-
1.2
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
-
790
2
10
30
-
50
130
-
2.8
1.6
Unit
mW
°C
°C
Unit
mW
nm
nm
deg
deg
µm
mm
hour
mA
mA
W/A
V
mA
15.07.2013
RLT790-80MGS
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