RLT7870MG Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode

RLT7870MG
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Lasing Mode Structure: single transverse mode
• Peak Wavelength : typ. 785 nm
• Optical Ouput Power: 70 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Anode
2 LD Cathode
3
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
Pulsed Output Power*
Reverse Voltage
Operating Case Temperature
Storage Temperature
* duty < 50%, pulse width <0.1µs
Symbol
P_O
P_{O pulse}
U_R
T_C
T_stg
Specifications (T_C=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
FWHM Beam Divergence
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Test Conditions
CW, P_O = 60mW
CW, P_O = 60mW
CW, P_O = 60mW
CW
CW, P_O = 60mW
CW, P_O = 60mW
CW, P_O = 60mW
Symbol
P_O
λ_P
θ_║
θ_┴
I_th
I_op
η
U_op
Value
70
100
2
-10 … +60
-40 … +100
Min.
-
775
7
17
-
-
-
-
Typ.
-
785
9
20
40
95
1.0
1.8
Unit
mW
mW
T_C
°C
°C
Max.
70
798
11
24
50
140
-
2.2
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
21.12.2011
RLT7870MG
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