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| RLT780-1000G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode | |||
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ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT780-1000G TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: multi mode
Lasing wavelength: typ. 785 nm
Optical power: 1 W
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
1.2
1.5
10
-20 .. +30
-40 .. +70
UNIT
W
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Emitting Aperture
A
cw
1 x 100
µm²
Optical Output Power
Po
Threshold Current
Ith
Operation Current
Iop
Forward Voltage
Uf
Lasing Wavelength
λp
Spectral Width FWHM
âλ
multi mode
cw
Po = 1 W
Po = 1 W
Po = 1 W
Po = 1 W
1
W
390 420 450 mA
1.2 1.3 1.4 A
1.8 1.9 2.0 V
780 785 790 nm
0.3 1.0 1.5 nm
Beam Divergence
θ//
Beam Divergence
θâ¥
Monitor Current
Im
Po = 1 W
Po = 1 W
Po = 1 W
25
°
30
°
100 500 1500 µA
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