RLT760-10G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – single mode

RLT760-10G
v 1.1 04.08.2013
Description
RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at
room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in
monitor PD.
Maximum Ratings
Parameter
Optical Output Power
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P_O
T_CASE
T_STG
T_SOLD
Min.
-20
-40
Values
Max.
10
+60
+85
180
Unit
mW
°C
°C
°C
Specifications
Parameter
Central Wavelength
Optical Output Power
Emitting Area
Threshold Current
Forward Current
Forward Voltage
Beam Divergence
Beam Divergence
Spectral Width (FWHM)
Static Alignment
Positional Accuracy
Mode Structure
Slope Efficiency
Monitor Current
Symbol
λ_C
P_O
WxH
I_TH
I_OP
U_OP
Ó¨II
Ө┴
Δλ
Δa II x
ΔX, ΔY, ΔZ
η
I_M
Min.
755
-
30
150
1.5
8
25
1.0
-
-
-
0.07
Values
Typ.
760
10
3 x 1.5
40
200
2.0
10
30
2.0
-
-
SM
0.5
0.4
Max.
765
-
50
250
2.2
12
35
5.0
< ±3
±100
-
0.8
Unit
nm
mW
µm
mA
mA
V
deg.
deg.
nm
deg.
µm
-
mW/mA
mA
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