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| RLT6650G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power Visible Laserdiode | |||
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ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT6650G TECHNICAL DATA
High Power Visible Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 660 nm typ., multimode
Output power: 50 mW
NOTE!
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
55
2
30
-10 .. +40
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
Po
Threshold Current
Ith
Operation Current
Iop
Operation Voltage
Vop
Lasing Wavelength
λp
Beam Divergence
θ//
Beam Divergence
θâ¥
Lasing Aperture
A
Monitor Current
Im
cw operation
cw operation
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
MIN
70
135
2.0
655
10
20
0.35
TYP MAX
50
85 120
160 220
2.1 2.2
660 665
12 14
25 30
10 x 1
0.5 1.5
UNIT
mW
mA
mA
V
nm
°
°
µm²
mA
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