RLT6530G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Visible Laser Diode

RLT6530G
Features
• Index Guided MQW Structure
• Wavelength : 655 nm (Typ.)
• Optical Power : 30 mW CW
• Threshold Current : 50 mA ( Typ. )
• Standard Package : 9.0 mm Ø
Visible Laser Diode
ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC )
DESCRIPTION
SYMBOL RATED VALUE
Optical Power (mW)
Po
30
Operation Temperature (ºC)
Top
-10 to +40
Storage Temperature (ºC)
Tstg
-40 to +85
LD Reverse Voltage (V)
VLDR
2
PD Reverse Voltage (V)
VPDR
30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC )
DESCRIPTION
SYMBOL
MIN.
TYPICAL
Lasing Wavelength (nm)
λp
645
655
Threshold Current (mA)
Ith
30
50
Operation Current (mA)
Iop
60
80
Operation Voltage (V)
Vop
2.0
2.2
Monitor Current (µA)
Im
10
-
Slope Efficiency (mW/mA)
ç
0.3
0.4
Beam Divergence ¦ (º)
θ¦
8
10
Beam Divergence ⊥ (º)
θ⊥
25
31
Astigmatism (µm)
As
***
11
MAX.
665
70
100
2.7
-
0.7
11
40
***
TEST CONDITION
Po=30 mW
Po=30 mW
Po=30 mW
Po=30 mW
Po=30mW, VR=5V
***
Po=30 mW
Po=30 mW
Po=30mW, NA=0.4