RLT635_100G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Visible Laser Diode

RLT635-100G
TECHNICAL DATA
High Power Visible Laser Diode
Emitting Aperatur: 1x100 µm²
Lasing wavelength: 635 nm, typ.
Max. optical power: 100 mW
Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode
3) n.c.
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
P_o
V_R(LD)
PD Reverse Voltage
Operating Temperature
Storage Temperature
V_R(PD)
T_op
T_stg
RATING
100
-
-
0 .. +25
-10 .. +60
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
P_o
Threshold Current
I_th
Operation Current
I_op
Operation Voltage
V_op
cw
cw
P_o = 100 mW
P_o = 100 mW
Slope Efficiency
Lasing Wavelength
λ_p
P_o = 100 mW
Spectral Wavelength
∆λ
P_o = 100 mW
Beam Divergence
Θ_//
P_o = 100 mW
Beam Divergence
Θ
P_o = 100 mW
Polarization
Wavelength Temp.
Coefficient
Po = 100 mW
MIN
-
-
-
-
0.5
625
-
TYP MAX
100 -
- 500
- 700
- 2.5
-
-
635 645
3
10
40
TE
0.3 -
UNIT
mW
mA
mA
V
W/A
nm
nm
°
°
nm/°C
03.08.2010
rlt635_100g.doc
1 of 2