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| RLT1550-30G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – high power infrared laser diode | |||
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ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT1550-30G TECHNICAL DATA
High Power Infrared Laserdiode
Structure: GaInAsP/InP SQW structure
Lasing wavelength: 1550 nm, single mode
Typ. optical power: 30 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Maximum LD Current
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
If
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
200
33
1.5
6
-20 .. +40
-40 .. +85
UNIT
mA
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Lasing Aperture
A
cw
Optical Output Power
Po
cw
Threshold Current
Ith
cw
Operation Current
Iop
Forward Voltage
Uf
Lasing Wavelength
λp
Beam Divergence
θ//
Po = 30 mW
Po = 30 mW
Po = 30 mW
Po = 30 mW
Beam Divergence
θâ¥
Po = 30 mW
Monitor Current
Im
Po = 30 mW
MIN
30
1520
> 20
TYP
1x5
30
55
160
2
1550
25
40
100
MAX
1580
1000
UNIT
µm²
mW
mA
mA
V
nm
°
°
µA
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