RLT1550-10G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared Laserdiode

ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: [phone] FAX: [phone]
e-mail: [e-mail] http://www.roithner-laser.com
RLT1550-10G TECHNICAL DATA
Infrared Laserdiode
Structure: GaInAsP/InP SQW structure
Lasing wavelength: single mode 1550 nm typ.
Typ. optical power: 10 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Maximum LD current
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
I_f
P_o
V_R(LD)
V_R(PD)
T_C
T_{S T G}
RATING
150
30
1.5
6
-20 .. +40
-40 .. +85
UNIT
mA
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Aperture
A
Optical Output Power
P_o
Threshold Current
I_th
Operation Current
I_op
Forward Voltage
U_f
Lasing Wavelength
λ_p
Beam Divergence
θ_//
Beam Divergence
θ_⊥
Monitor Current
I_m
cw
cw
P_o = 10 mW
P_o = 10 mW
P_o = 10 mW
P_o = 10 mW
P_o = 10 mW
P_o = 10 mW
MIN
1520
> 20
TYP
1x5
10
50
110
2
1550
25
40
100
MAX
1580
UNIT
µm²
mW
mA
mA
V
nm
°
°
µA