RLT1550-100G Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

RLT1550-100G
TECHNICAL DATA
Infrared Laser Diode
Structure: GaInAsP/InP, SQW structure
Lasing wavelength: typ. 1580 nm, multi mode
Max. optical power: 100 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST
CONDITION
Optical Output Power
P_o
cw
Threshold Current
I_th
cw
Operation Current
I_op
P_o = 100 mW
Operation Voltage
V_op
P_o = 100 mW
Lasing Wavelength
λ_p
P_o = 100 mW
Spectra halfwidth
(FWHM)
∆λ
P_o = 100 mW
Beam Divergence
Θ_//
P_o = 100 mW
Beam Divergence
Θ
P_o = 100 mW
Emitting area
Wxd
MIN TYP MAX
-
100
-
300 400 600
700 800 1000
2.3 2.4 2.5
- 1580 1582
3
4
6
8
10
12
43
45
47
-
100x
1
-
UNIT
mW
mA
mA
V
nm
nm
°
°
µm x
µm
04.08.2010
rlt1550_100g.doc
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