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| RLT1460-5MG Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode | |||
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ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT1460-5MG TECHNICAL DATA
Infrared Laser Diode
Structure: double heterostructure
Lasing wavelength: 1460 nm typ.
Max. optical power: 5 mW
Package: 5.6 mm
PIN CONNECTION:
NOTE!
LASERDIODE
MUST BE COOLED!
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
Top
Tstg
RATING
5
2
30
-10 .. +50
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Operation Current
Operation Voltage
Lasing Wavelength
Beam Divergence
Ith
cw
Iop
Po = 5 mW
Vop
Po = 5 mW
λp
Po = 5 mW
θ//
Po = 5 mW
MIN
-
-
1.0
1450
8
TYP
15
35
1.2
1460
10
MAX
20
40
1.3
1470
15
UNIT
mA
mA
V
nm
°
Beam Divergence
θâ¥
Po = 5 mW
25 30 40
°
Differential Efficiency
η
Po = 5 mW
- 200 300 µW/mA
Monitor Current
Im
Po = 5 mW, Vr=5V 250 350 650 µA
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