RLT1300-5G Datasheet, PDF (1/2 Pages) Samtec, Inc – High Power Infrared Laser Diode

RLT1300-5G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Structure: GaInAsP/InP SQW strucutre
• Peak Wavelength : single mode, typ. 1300 nm
• Optical Ouput Power: 5 mW
• Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
Maximum LD Current
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
I_f
U_R(LD)
U_R(PD)
T_C
T_stg
Value
8
70
1.5
6
-20 … +40
-40 … +85
Unit
mW
mA
V
V
°C
°C
Specifications (T_C=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
FWHM Beam Divergence
Emitting Aperature
Electrical Specification
Threshold Current
Operating Current
Operating Voltage
Monitor Current
Symbol
P_O
λ_P
θ_║
θ_┴
WxH
I_th
I_op
U_op
I_m
Condition
cw
P_O = 5 mW
P_O = 5 mW
P_O = 5 mW
cw
P_O = 5 mW
P_O = 5 mW
P_O = 5 mW
Min.
-
1270
-
-
-
-
-
>20
Typ.
5
1300
25
40
1x5
35
45
2
500
Max.
-
1330
-
-
-
55
-
1500
Unit
mW
nm
deg
deg
µm
mA
mA
V
µA
The above specifications are for reference purpose only and subjected to change without prior notice.
29.11.2010
RLT1300-5G
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