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RLT1300-50G Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode | |||
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RLT1300-50G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
⢠Structure: GaInAsP/InP SQW strucutre
⢠Peak Wavelength : single mode, typ. 1300 nm
⢠Optical Ouput Power: 50 mW
⢠Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item
CW Output Power
Maximum LD Current
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
PO
If
UR(LD)
UR(PD)
TC
Tstg
Value
60
260
1.5
6
-20 ⦠+40
-40 ⦠+70
Unit
mW
mA
V
V
°C
°C
Specifications (TC=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
FWHM Beam Divergence
Emitting Aperature
Electrical Specification
Threshold Current
Operating Current
Operating Voltage
Monitor Current
Symbol
PO
λP
Îλ
θâ
θâ´
WxH
Ith
Iop
Uop
Im
Condition
cw
PO = 40 mW
PO = 40 mW
PO = 40 mW
PO = 40 mW
cw
PO = 40 mW
PO = 40 mW
PO = 40 mW
Min.
-
1270
-
-
35
-
-
-
>20
Typ.
50
1300
6
25
40
1x5
35
-
1.5
500
Max.
-
1330
8
-
45
55
230
2
1500
Unit
mW
nm
nm
deg
deg
µm
mA
mA
V
µA
The above specifications are for reference purpose only and subjected to change without prior notice.
29.11.2010
RLT1300-50G
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