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| RLT1050M-500G Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power Infrared Laser Diode | |||
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RLT1050M-500G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
⢠Lasing Mode Structure: multi mode
⢠Peak Wavelength : typ. 1050 nm
⢠Optical Ouput Power: 500 mW
⢠Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
PO
VR(LD)
VR(PD)
TC
Tstg
Value
550
1.5
10
-20 ⦠+35
-40 ⦠+70
Unit
mW
V
V
°C
°C
Specifications (TC=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
FWHM Beam Divergence
Emitting Aperature
Electrical Specification
Threshold Current
Operating Current
Operating Voltage
Monitor Current
Operating Voltage
Symbol
PO
λP
Îλ
θâ
θâ´
WxH
Ith
Iop
Uop
Im
Uop
Min.
-
-
1.6
-
-
200
860
-
100
-
Typ.
500
1050
1.7
10
30
100 x 1
280
890
1.7
500
1.9
Max.
-
-
1.8
-
-
350
910
1.8
1500
-
Unit
mW
nm
nm
deg
deg
µm
mA
A
V
µA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
25.02.2011
RLT1050M-500G
1 of 3
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