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| RLT-BNP1000-02 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – High Power LED | |||
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RLT-BNP1000-02
TECHNICAL DATA
High Power LED
InGaN
FEATURES:
Growth Technique: MOCVD
Substrate: Sapphire(0001)
Structure: InGaN MQW
Chip size: 1000umÃ1000um
ABSOLUTE MAXIMUM RATINGS (at TA=25â) :
Parameter
Symbol
Min.
Max.
Unit
Forward Current
IF
Pulse Forward Current
IFP*
500
mA
1500
mA
Reverse Voltage
VR
5
V
Operating Temperature
Topr.
-30
+85
°C
Storage Temperature
Tstg.
-40
+85
°C
Power Dissipation
PD
*Pulse width:Max.10ms, Duty ratio: Max 1/10
1200
mW
Electrical/Optical Characteristics (at TA=25â) :
Parameter
Condition
Min.
Typ.
Max.
Unit
Forward Voltage VF
Reverse Current IR
IF=350mA
3.0
3.4
3.6
V
VR=5V
10
μA
Wavelength
IF=350mA
465
470
475
nm
Luminous Flux
IF=350mA
8
11
16
lm
20.08.2012
RLT-BNP1000-02
1 of 4
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