QL85I6SA Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

QL85I6SA
TECHNICAL DATA
Infrared Laser Diode
Features
• AlGaAs laser diode
• Peak Wavelength: 850 nm
• Optical Ouput Power: 5 mW
• Package: 5.6 mm, with Photo Diode
Electrical Connection
Pin Configuration
m-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_R (LD)
V_R (PD)
T_C
T_stg
Value
32
2
30
-10 … +60
-40 … +85
Unit
mW
V
V
°C
°C
Specifications (T_C=25°C)
Item
Optical Specifications
CW Output Power
Peak Wavelength *
FWHM Beam Divergence
Emission Point Accuracy
Astigmatism
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
* Measuring specifications.
Angle
Symbol
P_O
λ_P
θ_║
θ_┴
Δθ_║
Δθ_┴
As
I_th
I_op
η
U_op
I_m
Min.
-
845
7.0
25
-2.0
-3.0
5
50
0.4
-
0.05
Typ.
30
850
9.0
29
-
-
20
70
0.7
2.0
0.2
Max.
-
860
12.0
36
2.0
3.0
15
35
90
1.0
2.5
0.5
Unit
mW
nm
deg
deg
deg
deg
µm
mA
mA
W/A
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
10.12.2010
QL85I6SA
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