QL85D6SA Datasheet, PDF (1/5 Pages) Roithner LaserTechnik GmbH – Infrared Laser Diode

QL85D6SA
TECHNICAL DATA
Infrared Laser Diode
Features
• AlGaAs laser diode
• Peak Wavelength: 850 nm
• Optical Ouput Power: 5 mW
• Package: 5.6 mm, with photo diode
Electrical Connection
Pin Configuration
m-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Value
Unit
CW Output Power
P_O
7
mW
LD Reverse Voltage
V_R (LD)
2
V
PD Reverse Voltage
V_R (PD)
30
V
Operating Case Temperature
T_C
-10 … +60
°C
Storage Temperature
T_stg
-40 … +85
°C
Specifications (T_C=25°C)
Item
Symbol
Min.
Typ.
Max.
Unit
Optical Specifications
CW Output Power
P_O
-
5
-
mW
Peak Wavelength *
λ_P
845
850
855
nm
FWHM Beam Divergence
θ_║
7
9
12
deg
θ_┴
25
32
40
deg
Emission Point Accuracy
Angle
Δθ_║
Δθ_┴
-2.0
-3.0
-
-
2.0
deg
3.0
deg
Astigmatism
As
15
µm
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
I_th
5
10
20
mA
I_op
15
20
30
mA
η
0.4
0.7
0.9
W/A
Operating Voltage
Monitor Current
U_op
-
1.9
2.5
V
I_m
0.2
0.4
0.6
mA
* Measuring specifications.
The above specifications are for reference purpose only and subjected to change without prior notice.
09.05.2012
QL85D6SA
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